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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
AOW25S65	文件：271.38 Kbytes Page：6 Pages	650V 25A a MOS TM Power Transistor GeneralDescription TheAOW25S65&AOWF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOW25S65	文件：342.79 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=25A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max) •100avalanchetested •MinimumLot-to-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOB25S65	文件：297.83 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=25A@TC=25℃ •DrainSourceVoltage- :VDSS=650V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.19Ω(Max) •100avalanchetested •MinimumLot-to-	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOB25S65	文件：317.4 Kbytes Page：7 Pages	650V25AaMOSPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB25S65	文件：317.4 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB25S65	文件：317.38 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOB25S65L	文件：317.4 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT25S65	文件：304.33 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOT25S65	文件：317.4 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT25S65	文件：317.4 Kbytes Page：7 Pages	650V25AaMOSPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT25S65	文件：317.38 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOT25S65L	文件：317.38 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF25S65	文件：295.04 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOTF25S65	文件：317.4 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF25S65	文件：317.4 Kbytes Page：7 Pages	650V25AaMOSPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF25S65	文件：317.38 Kbytes Page：7 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOT25S65&AOB25S65&AOTF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications.ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanch	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD
AOTF25S65L	文件：295.05 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
AOWF25S65	文件：271.38 Kbytes Page：6 Pages	650V25AaMOSTMPowerTransistor GeneralDescription TheAOW25S65&AOWF25S65havebeenfabricatedusingtheadvancedαMOSTMhighvoltageprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinswitchingapplications. ByprovidinglowRDS(on),QgandEOSSalongwithguaranteedavalanchecapabilityt	AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体	AOSMD

详细参数

型号：
AOW25S65
功能描述：
MOSFET N-CH 650V 25A TO262
RoHS：
是
类别：
分离式半导体产品 >> FET - 单
系列：
aMOS™
标准包装：
1,000
系列：
MESH OVERLAY™ FET
型：
MOSFET N 通道，金属氧化物 FET
特点：
逻辑电平门
漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
C：
180 毫欧 @ 9A，10V Id 时的
Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
Vgs：
72nC @ 10V 输入电容(Ciss) @
Vds：
1560pF @ 25V 功率 -
最大：
40W
安装类型：
通孔
封装/外壳：
TO-220-3 整包
供应商设备封装：
TO-220FP
包装：
管件

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市金华微盛电子有限公司	AOW25S65	AOS/万代	2019+	TO262	3470	原厂渠道可含税出货	询价
深圳市泓利达微科技有限公司	AOW25S65	AOS/万代	24+	TO-262	333888	专业直销原装AOS一系列可订货	询价
深圳市科恒伟业电子有限公司	AOW25S65	AOS	2016+	TO-262	6528	房间原装进口现货假一赔十	询价
深圳市瑞新盛科技有限公司	AOW25S65	AOS		TO-262	20000	原装正品	询价
深圳市百视威讯电子科技有限公司	AOW25S65		23+	N/A	64910	正品授权货源可靠	询价
深圳市百诺芯科技有限公司	AOW25S65	AOS/万代	23+	TO-262	24190	原装正品代理渠道价格优势	询价
深圳市百域芯科技有限公司	AOW25S65	AOS/万代	21+	TO-262	30000	优势供应实单必成可13点增值税	询价
深圳市科雨电子有限公司	AOW25S65	AOS	1809+	TO-262	1675	就找我吧!--邀您体验愉快问购元件!	询价
深圳市汇莱威科技有限公司	AOW25S65	ALPHA		TO-262	265209	假一罚十原包原标签常备现货!	询价
深圳市国宇半导体科技有限公司	AOW25S65	AOS/万代	23+	TO262	10000	公司只做原装正品	询价

更多AOW25S65供应商更新时间2024-4-29 16:03:00

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