P-Channel Enhancement Mode Field Effect Transistor

General Description The AON4407L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. -RoHS Compliant -Halogen Free Features VDS (V) = -12V ID = -9 A (VGS = -4.5V

文件：164.88 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-CHANNEL ENHANCEMENT MODE

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 isolation package is universally preferred for all commercial-industrial applications and suited for l

文件：80.35 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS -30V RDS(ON) 14mΩ ID -10.7A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-indust

文件：72.36 Kbytes 页数：4 Pages

A-POWER

富鼎先进电子

P-Channel 30-V (D-S) MOSFET

文件：996.4 Kbytes 页数：9 Pages

VBSEMI

微碧半导体