P-CHANNEL ENHANCEMENT MODE

Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 isolation package is universally preferred for all commercial-industrial applications and suited for l

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A-POWER

富鼎先进电子

P-CHANNEL ENHANCEMENT MODE

APEC

富鼎先进电子

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

BVDSS -30V RDS(ON) 14mΩ ID -10.7A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-indust

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A-POWER

富鼎先进电子

P-Channel 30-V (D-S) MOSFET

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VBSEMI

微碧半导体

Simple Drive Requirement, Low On-resistance

BVDSS -30V RDS(ON) 14mΩ ID -10.7A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for all commercial-industrial surf

文件：213.84 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子