N-Channel Enhancement Mode Field Effect Transistor

General Description The AON6426L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. - RoHS Compliant - Halogen Free Features VDS (V) = 30V ID = 24A (VGS =

文件：139.05 Kbytes 页数：6 Pages

AOSMD

万国半导体

DFN 5X6 PACKAGE MARKING DESCRIPTION

文件：112.42 Kbytes 页数：1 Pages

AOSMD

万国半导体

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 3A, RDS(ON) = 90mΩ @VGS = 10V. RDS(ON) = 110mΩ @VGS = 4.5V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-89 package.

文件：417.25 Kbytes 页数：4 Pages

CET

华瑞

N-Channel 0-V (D-S) MOSFET

FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices

文件：1.77573 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 4.6A, RDS(ON) = 90mW @VGS = 10V. RDS(ON) = 110mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package. Lead free product is acquired.

文件：620.68 Kbytes 页数：4 Pages

CET-MOS

华瑞