N-Channel MOSFET

■ Features ● VDS (V) = 20V ● ID =5 A (VGS = 4.5V) ● RDS(ON)

文件：1.95983 Mbytes 页数：4 Pages

KEXIN

科信电子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO6422/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for general purpose application. AO6422 and AO6422L are electrically identical. -RoHS Compliant -AO6422L is Ha

文件：204.09 Kbytes 页数：4 Pages

AOSMD

万国半导体

Silicon Monolithic Integrated Circuit

文件：298.64 Kbytes 页数：5 Pages

ROHM

罗姆

Silicon monolithic integrated circuits

文件：138.34 Kbytes 页数：5 Pages

ROHM

罗姆