P-Channel Enhancement Mode Field Effect Transistor

General Description The AO5401E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.AO5401E and AO5401EL are electrically identical. -RoHS complian

文件：153.3 Kbytes 页数：5 Pages

AOSMD

万国半导体

P-Channel Enhancement Mode Field Effect Transistor

General Description The AO5401E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.AO5401E and AO5401EL are electrically identical. -RoHS complian

文件：153.3 Kbytes 页数：5 Pages

AOSMD

万国半导体

N-Channel 20 V (D-S) MOSFET

FEATURES • TrenchFET® power MOSFET • 100 Rg tested APPLICATIONS • Smart phones, tablet PC’s - DC/DC converters - Boost converters - Load switch, OVP switch

文件：1.88034 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO5404E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. -RoHS compliant Features VDS (V) = 20V ID = 0.5 A (VGS

文件：120.74 Kbytes 页数：4 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AO5600E/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.AO5600E and AO5600EL are electrically identical. -RoHS compliant -AO5600EL is Halogen F

文件：948.55 Kbytes 页数：9 Pages

AOSMD

万国半导体

Complementary Enhancement Mode Field Effect Transistor

General Description The AO5600E/L uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications.AO5600E and AO5600EL are electrically identical. -RoHS compliant -AO5600EL is Halogen F

文件：948.55 Kbytes 页数：9 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO5800 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low

文件：137.29 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO5800E uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SC89-6L footprint. It can be used for a wide variety of applications, including load switching, low current inverters and lo

文件：129.37 Kbytes 页数：4 Pages

AOSMD

万国半导体

Dual P-Channel Enhancement Mode Field Effect Transistor

General Description The AO5803E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SC89-6L footprint. It can be used as load switching, and wide variety of FET applications. AO5803E and AO5803EL are electr

文件：117.19 Kbytes 页数：5 Pages

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO5804E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO5804E and AO5804EL are electrically identical. -RoHS Complia

文件：206.98 Kbytes 页数：5 Pages

AOSMD

万国半导体