BUK4D122-20P

Marking：6H；Package：DFN2020MD-6；20 V, P-channel Trench MOSFET

1.GeneralDescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •ExtendedtemperaturerangeTj=175°C •Smallandleadle

BZT52C75

Marking：6H；Package：SOD-123；SURFACE MOUNT ZENER DIODES

FEATURES： PlanarDieConstruction 500mWPowerDissipationonCeramicPCB GeneralPurpose,MediumCurrent IdeallySuitedforAutomatedAssemblyProcesses AvailableinLeadFreeVersion

BZT52C75S

Marking：6H；Package：SOD-323；PLASTIC-ENCAPSULATE ZENER DIODE

VOLTAGE2.0~75VoltsPOWER200.0mW FEATURES •LowZenerImpedance •PowerDissipationof200mW •HighStabilityandHighReliability •ZenerVoltageTolerance:±5 MECHANICALDATA •Case:SOD-123SmallOutlinePlasticPackage •EpoxyUL:94V-0 •Polarity:Colorbanddenotescathodeend

DTA617

Marking：6H；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LDTA123EET1G

Marking：6H；Package：SC-89；Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

LDTA123EET1G

Marking：6H；Package：SC-89；Bias Resistor Transistors

BiasResistorTransistors PNPSiliconSurfaceMountTransistors withMonolithicBiasResistorNetwork Thisnewseriesofdigitaltransistorsisdesignedtoreplaceasingledeviceanditsexternalresistorbiasnetwork.TheBRT(BiasResistorTransistor)containsasingletransistorwithamono

MM1Z75

Marking：6H；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

MM1Z75

Marking：6H；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features •Totalpowerdissipation:max.500mW •Smallplasticpackagesuitableforsurfacemounteddesign •Toleranceapproximately±5

MMBF5486

Marking：6H；Package：SOT-23；N-Channel RF Amplifier

N-ChannelRFAmplifier ThisdeviceisdesignedprimarilyforelectronicswitchingapplicationssuchaslowOnResistanceanalogswitching. SourcedfromProcess50.

MMBF5486

Marking：6H；Package：SOT-23；SFET RF,VHF, UHF, Amplitiers

N-ChannelRFAmplifier •ThisdeviceisdesignedforRFamplifierandmixerapplications operatingupto450MHz,andforanalogswitchingrequiringlow capacitance. •Sourcedfromprocess50.