MMBZ33VB-QC

Marking：6H；Package：DFN1412D-3；Low capacitance bidirectional dual line ESD protection diode

1.Generaldescription ESDprotectiondeviceinanultrasmallDFN1412D-3(SOT8009)leadlessSurface-MountedDevice (SMD)plasticpackagewithsidewettableflanks,designedtoprotecttwolinesfromthedamage causedbyElectroStaticDischarge(ESD)andothertransients. 2.Featuresandben

NHUMH10

Marking：6H；Package：SOT363；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

NHUMH10

Marking：6H；Package：SC-88；80 V, 100 mA NPN/NPN resistor-equipped double transistors

1.Generaldescription NPN/NPNResistor-EquippeddoubleTransistors(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA PNP/PNP complement: NPN/PNP complement: NHUMH102.247NH

NHUMH10-Q

Marking：6H；Package：SOT363；80 V, 100 mA PNP/PNP resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

PBSS4032NX

Marking：6H；Package：SC-62；30 V, 4.7 A NPN low VCEsat (BISS) transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinamediumpowerandflatleadSOT89(SC-62)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS4032PX. Featuresandbenefits ■Verylowcollector-emittersaturationvoltageVCEsat ■Optimizedsw

PEMD20

Marking：6H；Package：SOT666；NPN/PNP resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

Features *Built-inbiasresistors *Simplifiescircuitdesign *Reducescomponentcount *Reducespickandplacecosts

UPC8226TK-E2

Marking：6H；Package：PKG；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES •Lownoise:NF=1.1dBTYP.@VCC=3.0V •Highgain:GP=18.0dBTYP.@VCC=3.0V •Lowcurrentconsumption:ICC=3.2mATYP.@VCC=3.0V •Gain1dBcompressionoutputpower:Po(1dB)=−5.0dBm@VCC=3.0V •Built-inpower-savefunction •High-densitysurfacemoun

UPC8226TK-E2-A

Marking：6H；Package：PKG；BIPOLAR ANALOG INTEGRATED CIRCUIT

FEATURES •Lownoise:NF=1.1dBTYP.@VCC=3.0V •Highgain:GP=18.0dBTYP.@VCC=3.0V •Lowcurrentconsumption:ICC=3.2mATYP.@VCC=3.0V •Gain1dBcompressionoutputpower:Po(1dB)=−5.0dBm@VCC=3.0V •Built-inpower-savefunction •High-densitysurfacemoun

BZT52C75

Marking：6H；Package：SOD-123；SURFACE MOUNT ZENER DIODE

BZT52C75S

Marking：6H；Package：SOD-323；SURFACE MOUNT ZENER DIODE