丝印：6H800N；Package：DFN5；MOSFET ??Power, Single N-Channel 80 V, 2.1 m, 203 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H800NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：189.14 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：6H800N；Package：DFN5；MOSFET ??Power, Single, N-Channel

文件：141.72 Kbytes 页数：6 Pages

ONSEMI

安森美半导体