丝印：6H801L；Package：DFN5；MOSFET - Power, Single N-Channel 80 V, 2.7 m, 160 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H801NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：184.06 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：6H801L；Package：DFN5；MOSFET - Power, Single N-Channel 80 V, 2.7 m, 160 A

文件：136.25 Kbytes 页数：6 Pages

ONSEMI

安森美半导体