丝印：6H801N；Package：DFN5；MOSFET ??Power, Single, N-Channel 80 V, 2.8 m, 157 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H801NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：210.99 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：6H801N；Package：DFN5；MOSFET ??Power, Single, N-Channel 80 V, 2.8 m, 157 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFS6H801NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：210.99 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：6H801N；Package：DFN5；MOSFET ??Power, Single, N-Channel

文件：181.36 Kbytes 页数：6 Pages

ONSEMI

安森美半导体