丝印：6H；Package：DFN2020MD-6；20 V, P-channel Trench MOSFET

1. General Description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Small and leadle

文件：327.79 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：6H；Package：SOD-323；PLASTIC-ENCAPSULATE ZENER DIODE

VOLTAGE 2.0~75 Volts POWER 200.0 mW FEATURES • Low Zener Impedance • Power Dissipation of 200mW • High Stability and High Reliability • Zener Voltage Tolerance: ± 5 MECHANICAL DATA • Case: SOD-123 Small Outline Plastic Package • Epoxy UL: 94V-0 • Polarity: Color band denotes cathode end

文件：1.05048 Mbytes 页数：6 Pages

NIUHANG

纽航电子

丝印：6H；Package：SC-89；Bias Resistor Transistors

Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a mono

文件：608.57 Kbytes 页数：16 Pages

FS

丝印：6H；Package：SC-89；Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a mono

文件：1.45259 Mbytes 页数：12 Pages

LEIDITECH

雷卯电子

丝印：6H；Package：SC-89；Bias Resistor Transistors

Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a mono

文件：774.3 Kbytes 页数：12 Pages

LRC

乐山无线电

丝印：6H；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5

文件：272.29 Kbytes 页数：4 Pages

SEMTECH_ELEC

先之科半导体

丝印：6H；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：6H；Package：SOT-23；SFET RF,VHF, UHF, Amplitiers

N-Channel RF Amplifier • This device is designed for RF amplifier and mixer applications operating up to 450MHz, and for analog switching requiring low capacitance. • Sourced from process 50.

文件：196.11 Kbytes 页数：2 Pages

FAIRCHILD

仙童半导体

丝印：6H；Package：SOT-23；N-Channel RF Amplifier

N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50.

文件：73.57 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

丝印：6H；Package：SOT363；80 V, 100 mA NPN/NPN resistor-equipped double transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：299.18 Kbytes 页数：15 Pages

NEXPERIA

安世