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65R040M2

型号:IMBG65R040M2H;Package:PG-TO263-7;MOSFET CoolSiCª MOSFET 650 V G2

Features •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

65R040M2

型号:IMLT65R040M2H;Package:PG-HDSOP-16;SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

65R040M2

型号:IMT65R040M2H;Package:PG-HSOF-8;CoolSiC™ MOSFET 650 V G2

Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

65R040M2

型号:IMTA65R040M2H;Package:PG-LHSOF-4;SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features •Ultra‑lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn‑onevenwith0Vturn‑offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

65R040M2

型号:IMW65R040M2H;Package:PG-TO247-3;MOSFET CoolSiCª MOSFET 650 V G2

Features •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

65R040M2

型号:IMZA65R040M2H;Package:PG-TO247-4;MOSFET CoolSiCª MOSFET 650 V G2

Features •Ultra-lowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.5V •Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage •Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme •Robustbodydiodeoperationunderhardcommutationevents •

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

供应商型号品牌批号封装库存备注价格
Infineon/英飞凌
25+
原厂封装
10280
原厂授权代理,专注军工、汽车、医疗、工业、新能源!
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PANDUIT
24+
con
35960
查现货到京北通宇商城
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PANDUIT
24+
con
10000
查现货到京北通宇商城
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4NIC
2012+
电源模块
1
原装现货 实单可谈
询价
XP
20+
电源模块
1520
就找我吧!--邀您体验愉快问购元件!
询价
XP Power
2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
询价
24+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
询价
XP Power
24+
N/A
12000
一级代理保证进口原装正品假一罚十价格合理
询价
更多65R040M2供应商 更新时间2025-7-30 18:25:00