丝印：65R040M2；Package：PG-HDSOP-16；SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.19729 Mbytes 页数：19 Pages

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采用 TOLT 封装的 CoolSiC ™ MOSFET 650 V G2

TOLT 中的 CoolSiC ™ MOSFET 分立 650 V G2 利用 CoolSiC ™第二代一流的开关性能，此外还具备顶部冷却的所有优点。现在可以补充已经与 CoolSiC ™和 CoolMOS ™一起使用的 QDPAK，以实现完全分立的顶部冷却解决方案，从而获得更好的热性能、系统成本降低和简化以及更便宜的组装。 • 优异的品质因数 (FOM)\n • 高稳健性和整体质量\n • 灵活的驱动电压范围\n • 支持单极驱动（VGS(off)=0）\n • 更低的热阻\n • 改进了与 .XT 的封装互连\n • 顶部冷却;

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英飞凌

CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.36087 Mbytes 页数：18 Pages

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英飞凌

SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：935.99 Kbytes 页数：17 Pages

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MOSFET CoolSiCª MOSFET 650 V G2

Features • Ultra-low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn-on even with 0 V turn-off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.50961 Mbytes 页数：16 Pages

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英飞凌