丝印：65R040M2；Package：PG-LHSOF-4；SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：935.99 Kbytes 页数：17 Pages

Infineon

英飞凌

CoolSiC ™ MOSFET 650 V G2，采用 Thin-TOLL 8x8 封装

CoolSiC™ MOSFET 650 V G2 in Thin-TOLL 8x8 package • Excellent figures of merit (FOMs)\n• Best in class RDS(on)\n• High robustness and overall quality\n• Flexible driving voltage range\n• Support for unipolar driving (VGS(off)=0)\n• Pin to pin compatible with all 8x8 FETs\n• Improved package interconnect with .XT\n• 4x improvement in TCoB\n\n优势:\n• ;

Infineon

英飞凌

MOSFET CoolSiCª MOSFET 650 V G2

Features • Ultra-low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn-on even with 0 V turn-off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.50961 Mbytes 页数：16 Pages

Infineon

英飞凌

MOSFET CoolSiCª MOSFET 650 V G2

Features • Ultra-low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn-on even with 0 V turn-off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.82012 Mbytes 页数：16 Pages

Infineon

英飞凌