丝印：65R060M2；Package：PG-TO263-7；IMBG65R060M2H

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.39982 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：65R060M2；Package：PG-HDSOP-16；SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.19733 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：65R060M2；Package：PG-HSOF-8；CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.35979 Mbytes 页数：18 Pages

Infineon

英飞凌

丝印：65R060M2；Package：PG-LHSOF-4；SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：936.54 Kbytes 页数：17 Pages

Infineon

英飞凌

丝印：65R060M2；Package：PG-TO247-3；SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.1444 Mbytes 页数：17 Pages

Infineon

英飞凌

丝印：65R060M2；Package：PG-TO247-4；SiC MOSFET CoolSiC™ MOSFET 650 V G2

Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events •

文件：1.02395 Mbytes 页数：17 Pages

Infineon

英飞凌