丝印：65R155F7；Package：PG-HSOF-8；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.51006 Mbytes 页数：14 Pages

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英飞凌

丝印：65R155F7；Package：PG-TO263-3；650V CoolMOS짧 CFD7 SJ Power Device

文件：1.27317 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：65R155F7；Package：PG-TO220-3；650V CoolMOS짧 CFD7 SJ Power Device

文件：1.05866 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：65R155F7；Package：PG-TO247-3；650V CoolMOS짧 CFD7 SJ Power Device

文件：1.39145 Mbytes 页数：14 Pages

Infineon

英飞凌