丝印：65R125F7；Package：PG-HDSOP-22；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.33147 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：65R125F7；Package：PG-HSOF-8；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature Benefits • Excellent hard commutation ruggedness • Extra safety margin for designs with increased bus voltage • Enabling increased powe

文件：1.50643 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：65R125F7；Package：PG-TO247-3；650V CoolMOSª CFD7 SJ Power Device

Features • Ultra-fast body diode • 650V break down voltage • Best-in-class RDS(on) • Reduced switching losses • Low RDS(on) dependency over temperature

文件：1.38498 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：65R125F7；Package：PG-TO263-3；650V CoolMOS짧 CFD7 SJ Power Device

文件：1.27622 Mbytes 页数：14 Pages

Infineon

英飞凌