IMW65R050M2H芯片代码丝印对应型号-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IMBG65R050M2H	文件：1.65401 Mbytes Page：16 Pages	丝印：65R050M2；Package：PG-TO263-7；MOSFET CoolSiCª MOSFET 650 V G2 Features • Ultra-low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn-on even with 0 V turn-off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events • 文件：1.65401 Mbytes 页数：16 Pages	Infineon 英飞凌	Infineon
IMLT65R050M2H	文件：1.1951 Mbytes Page：19 Pages	丝印：65R050M2；Package：PG-HDSOP-16；SiC MOSFET CoolSiC™ MOSFET 650 V G2 Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events • 文件：1.1951 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon
IMT65R050M2H	文件：1.35784 Mbytes Page：18 Pages	丝印：65R050M2；Package：PG-HSOF-8；CoolSiC™ MOSFET 650 V G2 Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events • 文件：1.35784 Mbytes 页数：18 Pages	Infineon 英飞凌	Infineon
IMTA65R050M2H	文件：934.4 Kbytes Page：17 Pages	丝印：65R050M2；Package：PG-LHSOF-4；SiC MOSFET CoolSiC™ MOSFET 650 V G2 Features • Ultra‑low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn‑on even with 0 V turn‑off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events • 文件：934.4 Kbytes 页数：17 Pages	Infineon 英飞凌	Infineon
IMW65R050M2H	文件：1.50315 Mbytes Page：16 Pages	丝印：65R050M2；Package：PG-TO247-3；MOSFET CoolSiCª MOSFET 650 V G2 Features • Ultra-low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn-on even with 0 V turn-off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events • 文件：1.50315 Mbytes 页数：16 Pages	Infineon 英飞凌	Infineon
IMZA65R050M2H	文件：1.51731 Mbytes Page：16 Pages	丝印：65R050M2；Package：PG-TO247-4；MOSFET CoolSiCª MOSFET 650 V G2 Features • Ultra-low switching losses • Benchmark gate threshold voltage, VGS(th) = 4.5 V • Robust against parasitic turn-on even with 0 V turn-off gate voltage • Flexible driving voltage and compatible with bipolar driving scheme • Robust body diode operation under hard commutation events • 文件：1.51731 Mbytes 页数：16 Pages	Infineon 英飞凌	Infineon

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星辰微电科技有限公司	IMW65R050M2H	Infineon	23+	PG-TO247-3	15500	英飞凌优势渠道全系列在售	询价
北京京北通宇电子元件有限公司	IMW65R050M2HXKSA1	INFINEON	24+	con	10000	查现货到京北通宇商城	询价
深圳市德力诚信科技有限公司	IMW65R050M2HXKSA1	INFINEON	24+	con	2500	优势库存,原装正品	询价
深圳市亿联芯电子科技有限公司	IMW65R057M1HXKSA1	Infineon Technologies	23+	TO-247-3	3652	原厂正品现货供应SIC全系列	询价
深圳市高捷芯城科技有限公司	IMW65R057M1HXKSA1	Infineon(英飞凌)	24+	TO247	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市中联芯电子有限公司	IMW65R057M1HXKSA1	Infineon	24+	PG-TO247-3	9000	只做原装正品有挂有货假一赔十	询价
深圳市天芯威科技有限公司	IMW65R057M1HXKSA1	INFINEON	24+	n/a	25836	新到现货,只做原装进口	询价
艾睿（深圳）半导体有限公司	IMW65R072M1H	Infineon(英飞凌)	2447	PG-TO247-3	115000	240个/管一级代理专营品牌!原装正品,优势现货,长期	询价
深圳市河锋鑫科技有限公司	IMW65R072M1H	Infineon/英飞凌	2021+	PG-TO247-3	9600	原装现货，欢迎询价	询价
深圳市斌能达电子科技有限公司	IMW65R072M1H	Infineon/英飞凌	24+	PG-TO247-3	6000	全新原装深圳仓库现货有单必成	询价

更多65R050M2供应商更新时间2025-9-19 14:42:00

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