丝印：65R045D2；Package：PG-HDSOP-16；CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency

文件：1.062 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：65R045D2；Package：PG-DSO-20；CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency

文件：857.66 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：65R045D2；Package：PG-HSOF-8；CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor

Features • Enhancement mode transistor ‑ Normally OFF switch • Ultra fast switching • No reverse‑recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • ESD (HBM/CDM) JEDEC standards Benefits • Improves system efficiency

文件：1.19511 Mbytes 页数：12 Pages

Infineon

英飞凌