丝印：65R048M1；Package：PG-HSOF-8；MOSFET 650 V CoolSiCª M1 SiC Trench Power Device

Features • Optimized switching behavior at higher currents • Commutation robust fast body diode with low Qf • Superior gate oxide reliability • Tj,max=175°C and excellent thermal behavior • Lower RDS(on) and pulse current dependency on temperature • Increased avalanche capability • Compatib

文件：1.50875 Mbytes 页数：15 Pages

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丝印：65R048M1；Package：PG-TO263-7-12；650 V CoolSiC짧 M1 SiC Trench Power Device

文件：1.59553 Mbytes 页数：15 Pages

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丝印：65R048M1；Package：PG-TO247-3；650 V CoolSiC짧 M1 SiC Trench Power Device

文件：1.47512 Mbytes 页数：15 Pages

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丝印：65R048M1；Package：PG-TO247-4-3；650 V CoolSiC짧 M1 SiC Trench Power Device

文件：1.48925 Mbytes 页数：15 Pages

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