MIC5365-1.0YC5

Marking：65C；Package：SC-70-5；High-Performance Single 150mA LDO

GeneralDescription TheMIC5365/6isanadvancedgeneralpurposelinearregulatorofferinghighpowersupplyrejection(PSRR)inanultra-small1mmx1mmpackage.TheMIC5366includesanauto-dischargefeaturethatisactivatedwhentheenablepinislow.TheMIC5365/6iscapableofsourcing150m

IP165R600C6

Marking：65C6600；Package：PG-TO262；650V CoolMOS C6 Power Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

IPA65R099C6

Marking：65C6099；Package：PG-TO220FullPAK；CoolMOS??C6 Power Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOSTMC6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theresu

IPA65R190C6

Marking：65C6190；Package：PG-TO220FullPAK；Extremely low losses due to very low FOM Rdson*Qg and Eoss

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

IPA65R280C6

Marking：65C6280；Package：PG-TO220FullPAK；650V CoolMOS C6 Power Transistor

Features •ExtremelylowlossesduetoveryFOMRdso*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •JEDEC1)qualified,Pb-freeplating,Halogenfree Applications:Adapter

IPA65R380C6

Marking：65C6380；Package：PG-TO220FullPAK；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principle andpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombines theexperienceoftheleadingSJMOSFETsupplierwithhighclass innovation.Theresult

IPA65R600C6

Marking：65C6600；Package：PG-TO220FullPAK；650V CoolMOS C6 Power Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhighcommutationruggedness •Easyto

IPB65R099C6

Marking：65C6099；Package：PG-TO263；CoolMOS??C6 Power Transistor

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETS,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOSTMC6seriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation. Theresu

IPB65R190C6

Marking：65C6190；Package：PG-TO263；Extremely low losses due to very low FOM Rdson*Qg and Eoss

Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theofferedde

IPB65R280C6

Marking：65C6280；Package：PG-TO263；650V CoolMOS C6 Power Transistor

Features •ExtremelylowlossesduetoveryFOMRdso*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •JEDEC1)qualified,Pb-freeplating,Halogenfree Applications:Adapter