丝印：65C；Package：SC-70-5；High-Performance Single 150mA LDO

General Description The MIC5365/6 is an advanced general purpose linear regulator offering high power supply rejection (PSRR) in an ultra-small 1mm x 1mm package. The MIC5366 includes an auto-discharge feature that is activated when the enable pin is low. The MIC5365/6 is capable of sourcing 150m

文件：532.88 Kbytes 页数：18 Pages

Microchip

微芯科技

丝印：65C6600；Package：PG-TO262；650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

文件：2.09837 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：65C6099；Package：PG-TO220FullPAK；CoolMOS??C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS TM C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

文件：3.83435 Mbytes 页数：20 Pages

Infineon

英飞凌

丝印：65C6190；Package：PG-TO220FullPAK；Extremely low losses due to very low FOM Rdson*Qg and Eoss

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件：2.21772 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：65C6280；Package：PG-TO220FullPAK；650V CoolMOS C6 Power Transistor

Features • Extremely low losses due to very FOM Rdso *Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications: Adapter

文件：2.11023 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：65C6380；Package：PG-TO220FullPAK；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The result

文件：1.95871 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：65C6600；Package：PG-TO220FullPAK；650V CoolMOS C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to

文件：2.09837 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：65C6099；Package：PG-TO263；CoolMOS??C6 Power Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETS, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS TM C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resu

文件：3.83435 Mbytes 页数：20 Pages

Infineon

英飞凌

丝印：65C6190；Package：PG-TO263；Extremely low losses due to very low FOM Rdson*Qg and Eoss

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de

文件：2.21772 Mbytes 页数：19 Pages

Infineon

英飞凌

丝印：65C6280；Package：PG-TO263；650V CoolMOS C6 Power Transistor

Features • Extremely low losses due to very FOM Rdso *Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications: Adapter

文件：2.11023 Mbytes 页数：19 Pages

Infineon

英飞凌