IPA65R190C6丝印代码丝印对应型号-114ic电子网

首页 >丝印反查>65C6190

型号	下载订购	功能描述	制造商上传企业	LOGO
IPA65R190C6	文件：2.21772 Mbytes Page：19 Pages	丝印：65C6190；Package：PG-TO220FullPAK；Extremely low losses due to very low FOM Rdson*Qg and Eoss Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de 文件：2.21772 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon
IPB65R190C6	文件：2.21772 Mbytes Page：19 Pages	丝印：65C6190；Package：PG-TO263；Extremely low losses due to very low FOM Rdson*Qg and Eoss Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de 文件：2.21772 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon
IPI65R190C6	文件：2.21772 Mbytes Page：19 Pages	丝印：65C6190；Package：PG-TO262；Extremely low losses due to very low FOM Rdson*Qg and Eoss Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de 文件：2.21772 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon
IPP65R190C6	文件：2.21772 Mbytes Page：19 Pages	丝印：65C6190；Package：PG-TO220；Extremely low losses due to very low FOM Rdson*Qg and Eoss Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de 文件：2.21772 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon
IPW65R190C6	文件：2.21772 Mbytes Page：19 Pages	丝印：65C6190；Package：PG-TO247；Extremely low losses due to very low FOM Rdson*Qg and Eoss Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de 文件：2.21772 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon
65C6190	文件：2.21772 Mbytes Page：19 Pages	Extremely low losses due to very low FOM Rdson*Qg and Eoss Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered de 文件：2.21772 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳瞄钧科技有限公司	IPA65R190C6	INFINEON	24+	TO-220F	50000	原装正品长期供货	询价
深圳市达恩科技有限公司	IPA65R190C6	Infineon	24+	NA	3000	进口原装正品优势供应	询价
中天科工半导体（深圳）有限公司	IPA65R190C6	英飞凌	20+	TO-220F	38900	原装优势主营型号-可开原型号增税票	询价
瀚佳科技(深圳)有限公司	IPA65R190C6	inf进口原	24+	TO-220F	30980	原装现货/放心购买	询价
京海半导体(深圳)有限公司	IPA65R190C6	英飞凌	21+	TO-220F	10000	原装现货假一罚十	询价
深圳市河锋鑫科技有限公司	IPA65R190C6	Infineon/英飞凌	22+	TO220	6000	十年配单,只做原装	询价
深圳市美思瑞电子科技有限公司	IPA65R190C6	INFINEON/英飞凌	22+	TO-220F	12245	现货,原厂原装假一罚十!	询价
深圳市威雅利发展有限公司	IPA65R190C6	Infineon	1433+	TO-220F	15	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市赛特兴科技有限公司	IPA65R190C6	Infineon(英飞凌)	23+	标准封装	7000	原厂原装现货订货价格优势终端BOM表可配单提供样品	询价
深圳市赛美科科技有限公司	IPA65R190C6	INFINEON		原厂封装	1000	一级代理原装正品假一罚十价格优势长期供货	询价

更多65C6190供应商更新时间2025-10-31 10:31:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号