IPB65R600C6芯片丝印丝印对应型号-114ic电子网

首页 >丝印反查>65C6600

型号	下载订购	功能描述	制造商上传企业	LOGO
IP165R600C6	文件：2.09837 Mbytes Page：19 Pages	丝印：65C6600；Package：PG-TO262；650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件：2.09837 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon
IPA65R600C6	文件：2.09837 Mbytes Page：19 Pages	丝印：65C6600；Package：PG-TO220FullPAK；650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件：2.09837 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon
IPB65R600C6	文件：2.09837 Mbytes Page：19 Pages	丝印：65C6600；Package：PG-TO263；650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件：2.09837 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon
IPD65R600C6	文件：2.09837 Mbytes Page：19 Pages	丝印：65C6600；Package：PG-TO252；650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件：2.09837 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon
IPP65R600C6	文件：2.09837 Mbytes Page：19 Pages	丝印：65C6600；Package：PG-TO220；650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件：2.09837 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon
65C6600	文件：2.09837 Mbytes Page：19 Pages	650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件：2.09837 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon

详细参数

型号：
65C6600
功能描述：
MOSFET 650V CoolMOS C6 Power Transistor
RoHS：
否
制造商：
STMicroelectronics
晶体管极性：
N-Channel
汲极/源极击穿电压：
650 V
闸/源击穿电压：
25 V
漏极连续电流：
130 A 电阻汲极/源极
RDS（导通）：
0.014 Ohms
配置：
Single
安装风格：
Through Hole
封装/箱体：
Max247
封装：
Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市河锋鑫科技有限公司	IPB65R600C6	英飞翎	17+	D2PAK(TO-263)	31518	原装正品可含税交易	询价
深圳市高捷芯城科技有限公司	IPB65R600C6	Infineon(英飞凌)	24+	TO-263	7793	支持大陆交货,美金交易。原装现货库存。	询价
深圳市华来深电子有限公司	IPB65R600C6	INFINE0N	23+	TO-263	11846	一级代理商现货批发,原装正品,假一罚十	询价
中天科工半导体（深圳）有限公司	IPB65R600C6	INFINEON	20+	D2PAK(TO-263)	36900	原装优势主营型号-可开原型号增税票	询价
深圳市威尔健半导体有限公司	IPB65R600C6	INFINEON/英飞凌	23+	D2PAK(TO-263)	50000	全新原装正品现货,支持订货	询价
贸泽芯城（深圳）电子科技有限公司	IPB65R600C6	INFINEON/英飞凌	23+	D2PAK(TO	30000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市赛美科科技有限公司	IPB65R600C6	INFINEON		原厂封装	1000	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市得捷芯城科技有限公司	IPB65R600C6	INFINEON/英飞凌	24+	NA/	18500	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市安富世纪电子有限公司	IPB65R600C6	ADI	23+	D2PAK(TO-263)	8000	只做原装现货	询价
天津市博通航睿技术有限公司	IPB65R600C6	ADI	23+	D2PAK(TO-263)	7000		询价

更多65C6600供应商更新时间2025-10-31 14:00:00

客户服务网站合作

Tel：0755 8246 9263
Email：kf＠114ic.com
投诉建议：kf@114ic.com

Copyright © 2003-2025 114ic.com All Rights Reserved 粤ICP备05011613号粤公网安备 44030402000933号