| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
丝印：65C6600；Package：PG-TO262；650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件：2.09837 Mbytes 页数：19 Pages | INFINEON 英飞凌 | INFINEON | ||
丝印：65C6600；Package：PG-TO220FullPAK；650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件：2.09837 Mbytes 页数：19 Pages | INFINEON 英飞凌 | INFINEON | ||
丝印：65C6600；Package：PG-TO263；650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件：2.09837 Mbytes 页数：19 Pages | INFINEON 英飞凌 | INFINEON | ||
丝印：65C6600；Package：PG-TO252；650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件：2.09837 Mbytes 页数：19 Pages | INFINEON 英飞凌 | INFINEON | ||
丝印：65C6600；Package：PG-TO220；650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件：2.09837 Mbytes 页数：19 Pages | INFINEON 英飞凌 | INFINEON | ||
65C6600 | 650V CoolMOS C6 Power Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very high commutation ruggedness • Easy to 文件：2.09837 Mbytes 页数：19 Pages | INFINEON 英飞凌 | INFINEON |
详细参数
- 型号：
65C6600
- 功能描述：
MOSFET 650V CoolMOS C6 Power Transistor
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
英飞翎 |
17+ |
TO-220 |
31518 |
原装正品 可含税交易 |
询价 | ||
INFINEON/英飞凌 |
25+ |
TO-220 |
15000 |
原装现货假一赔十 |
询价 | ||
INFINEON/英飞凌 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
INFINEON |
17+ |
TO-220 |
6200 |
100%原装正品现货 |
询价 | ||
INFINE0N |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
INFINEON |
19+ |
TO-220 |
32000 |
原装正品,现货特价 |
询价 | ||
INFINEON |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
INFINEON |
24+ |
TO-220 |
5850 |
全新原装现货 |
询价 | ||
INFINEON/英飞凌 |
23+ |
TO-220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
infineon |
25+ |
TO-220 |
10000 |
原装现货假一罚十 |
询价 |
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