丝印：60N02；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF60N02 combines advanced trench MOSFETtechnology with a low resistance package to provideextremely low RDS(ON) .This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimize co

文件：3.64554 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

N-Channel 30-V (D-S) MOSFET

文件：1.01792 Mbytes 页数：8 Pages

VBSEMI

微碧半导体