丝印：60N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 60N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：658.29 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：60N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 60N06A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：922.46 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：60N06SA；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：485.24 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：60N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 60N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：658.29 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：60N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 60N06A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：922.46 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：D2PAK；Package：TO-263；N-Channel 60-V (D-S) MOSFET

文件：983.43 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

60 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( ty

文件：201.28 Kbytes 页数：8 Pages

UTC

友顺

N-Channel 60-V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：949.64 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

60 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( ty

文件：201.28 Kbytes 页数：8 Pages

UTC

友顺

60 Amps, 60 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 60N06 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed, low thermal resistance, usually used at telecom and computer application. FEATURES * RDS(ON) ≤ 18mΩ @ VGS=10V, ID=30A * Ultra low gate charge ( ty

文件：201.28 Kbytes 页数：8 Pages

UTC

友顺