丝印：600；Package：DO-214AB；Transient Voltage Suppressors (TVS) Data Sheet

Features ■For surface mounted applications in order to optimize board space ■Low profile package ■Built in strain relief ■Glass p assivated j unction ■Low inductance ■Excellent clamping capability ■150 0W peak pulse power capability at 10/1000 μ s waveform, r epetition r ate (duty cycle): 0

文件：1.4662 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：6004B01L；Package：TSSOP；62.5MHz to 250MHz, 1:4 LVCMOS/ LVTTL Zero Delay Clock Buffer

FEATURES • Four LVCMOS/LVTTL outputs, 7Ω typical output impedance • Single LVCMOS/LVTTL clock input • CLK accepts the following input levels: LVCMOS or LVTTL • Output frequency range: 62.5MHz to 250MHz • Input frequency range: 62.5MHz to 250MHz • External feedback for “zero delay” clock rege

文件：155.56 Kbytes 页数：12 Pages

RENESAS

瑞萨

丝印：6004B01L；Package：TSSOP；62.5MHz to 250MHz, 1:4 LVCMOS/ LVTTL Zero Delay Clock Buffer

FEATURES • Four LVCMOS/LVTTL outputs, 7Ω typical output impedance • Single LVCMOS/LVTTL clock input • CLK accepts the following input levels: LVCMOS or LVTTL • Output frequency range: 62.5MHz to 250MHz • Input frequency range: 62.5MHz to 250MHz • External feedback for “zero delay” clock rege

文件：155.56 Kbytes 页数：12 Pages

RENESAS

瑞萨

丝印：6003；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description The uses advanced trench technolo gy to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. DMN6075SQ General Features VDS = 60V ID =3A RDS(ON)

文件：1.92812 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：6003X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：639.44 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：6003M；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003M uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature ● VDS =60V,ID =3.0A RDS(ON)

文件：257.26 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：6003X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003X uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：642.2 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：6003XM；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XM uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：675.83 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：6003XY；Package：SOT-23-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features ● VDS =60V,ID =3A RDS(ON)

文件：711.16 Kbytes 页数：7 Pages

NCEPOWER

新洁能

丝印：6003；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description The uses advanced trench techno logy to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. Thi s device is suitable for use as a Battery protection or in other Switching application. NVR5198NL General Features VDS = 60V ID =3A RDS(ON)

文件：1.9281 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子