IPA600N25NM3S

Marking：600N253S；Package：PG-TO220；OptiMOSTM 3 Power-Transistor, 250 V

Features •Idealforhighfrequencyswitchingandsync.rec. •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

NCE6003

Marking：6003X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6003usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCE6003M

Marking：6003M；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6003Musesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatechargeandoperationwithgate voltagesaslowas2.5V.Thisdeviceissuitableforuseasa Batteryprotectionorinotherswitchingapplication. GeneralFeature ●VDS=60V,ID=3.0A RDS(ON)

NCE6003X

Marking：6003X；Package：SOT-23；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6003Xusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCE6003XM

Marking：6003XM；Package：SOT-89-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6003XMusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCE6003XY

Marking：6003XY；Package：SOT-23-3L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6003XYusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Thisdeviceissuitablefor useasaBatteryprotectionorinotherswitchingapplication.GeneralFeatures ●VDS=60V,ID=3A RDS(ON)

NCE6005AN

Marking：6005AN；Package：SOT23-6L；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6005ANusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications.GeneralFeatures ●VDS=60V,ID=5A RDS(ON)

NCE6007S

Marking：6007；Package：SOP-8；NCE N-Channel Enhancement Mode Power MOSFET

Description TheNCE6007Susesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=60V,ID=7A RDS(ON)

NVMFS5H600NLWFT1G

Marking：600LWF；Package：DFNW5；MOSFET ??Power, Single N-Channel, DFN5/DFNW5 60 V, 1.3 m, 250 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant

NVR5198NL

Marking：6003；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET

Description Theusesadvancedtrenchtechnology toprovideexcellentRDS(ON),lowgatechargeand operationwithgatevoltagesaslowas4.5V.This deviceissuitableforuseasaBatteryprotection orinotherSwitchingapplication. NVR5198NL GeneralFeatures VDS=60VID=3A RDS(ON)