BC859B

Marking：4B；Package：SOT23；PNP general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

BC859BW

Marking：4B；Package：SOT323；PNP general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

BUK9D23-40E

Marking：4B；Package：DFN2020MD-6；40 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inamediumpowerDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •ExtendedtemperaturerangeTj=175°C •Sidewettableflanksforo

BZX884S-C13

Marking：4B；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-C13-Q

Marking：4B；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

DMN2310UFB4-7B

Marking：4B；Package：X2-DFN1006-3；N-CHANNEL ENHANCEMENT MODE MOSFET

Features FootprintofJust0.6mm2–ThirteenTimesSmallerthanSOT23 0.4mmProfile–IdealforLowProfileApplications LowGateThresholdVoltage FastSwitchingSpeed ESDProtectedGate TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”

IAUZN04S7N020

Marking：4B；Package：PG-TSDSON-8-44；OptiMOSTM 7 Power-Transistor

Features •OptiMOSTMpowerMOSFETforautomotiveapplications •N-channel–Enhancementmode–NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100%Avala

MM1Z2V2

Marking：4B；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

PBSS8110X

Marking：4B；Package：SC-62；100 V, 1 A NPN low VCEsat (BISS) transistor

Features *SOT89package *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highefficiencyleadingtolessheatgeneration

PESD4USB3B-TBS

Marking：4B；Package：DFN2510D；ESD protection for high-speed interfaces

1.Generaldescription ThisbidirectionalESDprotectiondeviceisdesignedtoprotecthigh-speedinterfacessuchas SuperSpeedUSB3.2at10Gbps,HDMI,DisplayPort,externalSerialAdvancedTechnology Attachment(eSATA),LowVoltageDifferentialSignaling(LVDS),andGigabitMultimediaSerial