丝印：4B；Package：SOT23；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

文件：355.55 Kbytes 页数：9 Pages

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安世安世半导体(中国)有限公司

丝印：4B；Package：SOT323；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

文件：330.54 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4B；Package：DFN2020MD-6；40 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 °C • Side wettable flanks for o

文件：311.11 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4B；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4B；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4B；Package：X2-DFN1006-3；N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Footprint of Just 0.6mm2 – Thirteen Times Smaller than SOT23  0.4mm Profile – Ideal for Low Profile Applications  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green”

文件：475.54 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：4B；Package：PG-TSDSON-8-44；OptiMOSTM 7 Power-Transistor

Features • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avala

文件：2.93933 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：4B；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：4B；Package：SC-62；100 V, 1 A NPN low VCEsat (BISS) transistor

Features * SOT89 package * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High efficiency leading to less heat generation

文件：327.72 Kbytes 页数：16 Pages

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安世安世半导体(中国)有限公司

丝印：4B；Package：DFN2510D；ESD protection for high-speed interfaces

1. General description This bidirectional ESD protection device is designed to protect high-speed interfaces such as SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, external Serial Advanced Technology Attachment (eSATA), Low Voltage Differential Signaling (LVDS), and Gigabit Multimedia Serial

文件：241.42 Kbytes 页数：11 Pages

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