100 V, 1 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package. PNP complement: PBSS9110X. Features ■ SOT89 package ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High effic

文件：148.26 Kbytes 页数：15 Pages

PHI

飞利浦

100 V, 1 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package. PNP complement: PBSS9110X. Features ■ SOT89 package ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High effic

文件：214.44 Kbytes 页数：15 Pages

恩XP

丝印：4B；Package：SC-62；100 V, 1 A NPN low VCEsat (BISS) transistor

Features * SOT89 package * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High efficiency leading to less heat generation

文件：327.72 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

100 V, 1 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package. PNP complement: PBSS9110X. Features ■ SOT89 package ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High effic

文件：148.26 Kbytes 页数：15 Pages

PHI

飞利浦

100 V, 1 A NPN low VCEsat (BISS) transistor

文件：214.44 Kbytes 页数：15 Pages

PHI

飞利浦

100 V, 1 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package.\n PNP complement: PBSS9110X. • SOT89 package\n• High collector current capability: IC and ICM\n• AEC-Q101 qualified;

Nexperia

安世

100 V, 1 A NPN low VCEsat (BISS) transistor

General description\nNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package.\nPNP complement: PBSS9110X. ■ SOT89 package\n■ Low collector-emitter saturation voltage VCEsat\n■ High collector current capability: IC and ICM\n■ High efficiency leading to less heat generationApplications\n■ Major application segments:\n   ◆ Automotive 42 V power\n   ◆ Telecom infrastructure\n   ◆ Industrial\n■ Peripheral dr;

恩XP

恩智浦

100 V, 1 A NPN low VCEsat transistor

NPN low VCEsat transistor in a small SOT89 (SC-62/TO-243) Surface Mounted Device (SMD) plastic package.\n PNP complement: PBSS9110X-Q.

Nexperia

安世

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 100V 1A SOT89

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司