100 V, 1 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package. PNP complement: PBSS9110X. Features ■ SOT89 package ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High effic

文件：148.26 Kbytes 页数：15 Pages

PHI

飞利浦

100 V, 1 A NPN low VCEsat (BISS) transistor

General description\nNPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package.\nPNP complement: PBSS9110X. ■ SOT89 package\n■ Low collector-emitter saturation voltage VCEsat\n■ High collector current capability: IC and ICM\n■ High efficiency leading to less heat generationApplications\n■ Major application segments:\n   ◆ Automotive 42 V power\n   ◆ Telecom infrastructure\n   ◆ Industrial\n■ Peripheral dr;

恩XP

恩智浦