74LVCH2T45RA3-7

Marking：4C；Package：X2-DFN1210-8；DUAL BIT DUAL POWER SUPPLY TRANSLATING TRANSCEIVER WITH 3 STATE OUTPUTS

Features WideSupplyVoltageRange: VCC(A):from1.2Vto5.5V VCC(B):from1.2Vto5.5V ±24mAOutputDriveat3.3V CMOSLowPowerConsumption16μAMaximumICC HighNoiseImmunity IOFFSupportsPartial-Power-DownModeOperation IOFFControlledbyEitherVCCBeingat0V I

AGBLC24C-HF

Marking：4C；Package：SOD-323；SMD ESD Protection Diode

Features -Unidirectional&bidirectionalconfigurations. -ProtectsonepowerorI/Oport. -Lowclampingvoltage. -AEC-Q101Qualified. -ESDprotection>30kV

BC859C

Marking：4C；Package：SOT23；PNP general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

BC859CLT1G

Marking：4C；Package：SOT-23；General Purpose Transistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

BC859CLT3G

Marking：4C；Package：SOT-23；General Purpose Transistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

BC859CW

Marking：4C；Package：SOT323；PNP general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

BUK7D25-40E

Marking：4C；Package：DFN2020MD-6；40 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inamediumpowerDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •ExtendedtemperaturerangeTj=175℃ •Sidewettableflanksforop

BZX884S-C15

Marking：4C；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-C15-Q

Marking：4C；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

CDSOD323-T24C

Marking：4C；Package：SOD-323；Portable communications, computing and video equipment manufacturers are challenging the semiconductor industry to develop increasingly smaller electronic components.

Features ProtectsonelineoroneI/Oport Bidirectionalconfiguration ESDprotection30kVmax. Lowcapacitance:~3pFtypical