100 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package. NPN complement: PBSS8110X Features ■ SOT89 package ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High efficie

文件：134.99 Kbytes 页数：15 Pages

PHI

飞利浦

100 V, 1 A PNP low VCEsat (BISS) transistor

General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) SMD plastic package. NPN complement: PBSS8110X. Features ■ SOT89 package ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ High effici

文件：208.45 Kbytes 页数：15 Pages

恩XP

丝印：4C；Package：SC-62；100 V, 1 A PNP low VCEsat (BISS) transistor

Features * SOT89 package * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High efficiency leading to less heat generation

文件：321.85 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

100 V, 1 A PNP low VCEsat (BISS) transistor

文件：208.45 Kbytes 页数：15 Pages

PHI

飞利浦

100 V, 1 A PNP low VCEsat (BISS) transistor

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package.\n NPN complement: PBSS8110X. • SOT89 package\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency leading to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 1A SOT89

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司