丝印：4C；Package：X2-DFN1210-8；DUAL BIT DUAL POWER SUPPLY TRANSLATING TRANSCEIVER WITH 3 STATE OUTPUTS

Features  Wide Supply Voltage Range:  VCC(A): from 1.2V to 5.5V  VCC(B): from 1.2V to 5.5V  ± 24mA Output Drive at 3.3V  CMOS Low Power Consumption 16μA Maximum ICC  High Noise Immunity  IOFF Supports Partial-Power-Down Mode Operation  IOFF Controlled by Either VCC Being at 0V  I

文件：842.55 Kbytes 页数：16 Pages

DIODES

美台半导体

丝印：4C；Package：SOT23；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

文件：355.55 Kbytes 页数：9 Pages

NEXPERIA

安世

丝印：4C；Package：SOT-23；General Purpose Transistors

General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

文件：179.58 Kbytes 页数：8 Pages

FS

丝印：4C；Package：SOT-23；General Purpose Transistors

General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

文件：179.58 Kbytes 页数：8 Pages

FS

丝印：4C；Package：SOT323；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

文件：330.54 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：4C；Package：DFN2020MD-6；40 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 ℃ • Side wettable flanks for op

文件：317.95 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：4C；Package：SOT-23；SILICON PLANAR VARIABLE CAPACITANCE DIODE

SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE

文件：35.61 Kbytes 页数：1 Pages

ZETEX

丝印：4C；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：4C；Package：SC-62；100 V, 1 A PNP low VCEsat (BISS) transistor

Features * SOT89 package * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High efficiency leading to less heat generation

文件：321.85 Kbytes 页数：16 Pages

NEXPERIA

安世

丝印：4C；Package：SOT-89；TL431, TL432 Precision Programmable Reference

1 Features • Reference voltage tolerance at 25°C – 0.5 (B grade) – 1 (A grade) – 2 (Standard grade) • Adjustable output voltage: Vref to 36 V • Operation from −40°C to 125°C • Typical temperature drift (TL43xB) – 6 mV (C temp) – 14 mV (I temp, Q temp) • Low Output Noise • 0.2-Ω Typical

文件：3.08309 Mbytes 页数：83 Pages

TI

德州仪器