丝印：4D；Package：X2-DFN1410-8；DUAL BIT DUAL POWER SUPPLY TRANSLATING TRANSCEIVER WITH 3 STATE OUTPUTS

Features  Wide Supply Voltage Range:  VCC(A): from 1.2V to 5.5V  VCC(B): from 1.2V to 5.5V  ± 24mA Output Drive at 3.3V  CMOS Low Power Consumption 16μA Maximum ICC  High Noise Immunity  IOFF Supports Partial-Power-Down Mode Operation  IOFF Controlled by Either VCC Being at 0V  I

文件：842.55 Kbytes 页数：16 Pages

DIODES

美台半导体

丝印：4D；Package：SOT323；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

文件：330.54 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：4D；Package：DFN2020MD-6；40 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 ℃ • Side wettable flanks for op

文件：280.98 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：4D；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：4D；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：4D；Package：SOT-23；Epitaxial Transistor

PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor FEATURES • High Voltage Transistor

文件：283.49 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：4D；Package：SOT-23；PNP Plastic-Encapsulate Transistors

FEATURES • Epoxy meets UL-94 V-0 flammability rating • Complementary to MMBTA44 • Power Dissipation of 350mW • High Stability and High Reliability

文件：1.35017 Mbytes 页数：5 Pages

JINGHENG

晶恒

丝印：4D；Package：SOT-23；PNP Transistors

■ Features ● High Breakdown Voltage ● Complement to MMBTA44

文件：576.86 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：4D；Package：SOT-23；Surface mount High Voltage Transistors

Surface mount High Voltage Transistors • Power dissipation 200 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：105.44 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

丝印：4D；Package：SOT-23；PNP Transistors

■ Features ● High Breakdown Voltage ● Complement to MMBTA44

文件：576.86 Kbytes 页数：3 Pages

YFWDIODE

佑风微