74LVCH2T45HK3-7

Marking：4D；Package：X2-DFN1410-8；DUAL BIT DUAL POWER SUPPLY TRANSLATING TRANSCEIVER WITH 3 STATE OUTPUTS

Features WideSupplyVoltageRange: VCC(A):from1.2Vto5.5V VCC(B):from1.2Vto5.5V ±24mAOutputDriveat3.3V CMOSLowPowerConsumption16μAMaximumICC HighNoiseImmunity IOFFSupportsPartial-Power-DownModeOperation IOFFControlledbyEitherVCCBeingat0V I

BC859W

Marking：4D；Package：SOT323；PNP general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

BUK6D43-40P

Marking：4D；Package：DFN2020MD-6；40 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inamediumpowerDFN2020MD-6 (SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •ExtendedtemperaturerangeTj=175℃ •Sidewettableflanksforop

BZX884S-C16

Marking：4D；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-C16-Q

Marking：4D；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

IAUZN04S7L046

Marking：4D；Package：PG-TSDSON-8-44；OptiMOSTM 7 Power-Transistor

Features •OptiMOSTMpowerMOSFETforautomotiveapplications •N-channel–Enhancementmode–LogicLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100%Avalan

MM1Z2V7

Marking：4D；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

MMBTA94

Marking：4D；Package：SOT-23；Plastic -Encapsulate Transistors

FEATURES HighBreakdownVoltage

MMBTA94

Marking：4D；Package：SOT-23；PNP Transistors

■Features ●HighBreakdownVoltage ●ComplementtoMMBTA44

MMBTA94

Marking：4D；Package：SOT-23；PNP Plastic-Encapsulate Transistors

FEATURES •EpoxymeetsUL-94V-0flammabilityrating •ComplementarytoMMBTA44 •PowerDissipationof350mW •HighStabilityandHighReliability