AAT3104IJQ-2-T1

Marking：4DXYY；Package：SC70JW-10；Low Cost 1x/2x Four-Channel Charge Pump WLED Driver

Features •Drivesupto4LEDsatupto31mAeach •AutomaticSwitchingBetween1xand2xModes •1MHzSwitchingFrequency •LinearLEDOutputCurrentControl •Single-wire,S2CwireInterface AAT3104-1:16-step AAT3104-2:32-step •±10LEDOutputCurrentAccuracy •±3LEDOutputCurrentM

NTMFS4D0N08XT1G

Marking：4D0N08；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 3.5 m, 119 A

Features •LowQRR,SoftRecoveryBodyDiode •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •SynchronousRectification(SR)inDC−DCandAC−DC •P

NTTFS4D9N04XMTAG

Marking：4D9N4；Package：WDFN8；MOSFET - Power, Single N-Channel, STD Gate, 8FL 40 V, 4.9 m, 65 A

Features •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •SmallFootprint(3.3x3.3mm)forCompactDesign •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHSCompliant Applications •MotorDrive •BatteryProtection •SynchronousRec

NVMYS4D1N06CLTWG

Marking：4D1N06CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 60 V, 4.0 m, 100 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS4D5N04CTWG

Marking：4D5N04C；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 4.5 m, 80 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS4D6N04CLTWG

Marking：4D6N04CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 4.5 m, 78 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •LFPAK4Package,IndustryStandard •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVMYS4D6N06CTWG

Marking：4D6N06C；Package：LFPAK4；MOSFET - Power, Single N-Channel 60 V, 4.7 m, 92 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

SMA4F64A

Marking：4DE；Package：DO221-AC；400 W TVS in SMA Flat

Features •Peakpulsepower:400W(10/1000μs)and2.5kW(8/20μs) •Flatandthinpackage:1mm •Stand-offvoltagerangefrom5Vto188V •Unidirectionaltype •Lowleakagecurrent:0.2μAat25°Cand1μAat85°C •OperatingTjmax:175°C •HighpowercapabilityatTjmax.:upto

SMA4F70A

Marking：4DK；Package：DO221-AC；400 W TVS in SMA Flat

Features •Peakpulsepower:400W(10/1000μs)and2.5kW(8/20μs) •Flatandthinpackage:1mm •Stand-offvoltagerangefrom5Vto188V •Unidirectionaltype •Lowleakagecurrent:0.2μAat25°Cand1μAat85°C •OperatingTjmax:175°C •HighpowercapabilityatTjmax.:upto

SMA4F85A

Marking：4DZ；Package：DO221-AC；400 W TVS in SMA Flat

Features •Peakpulsepower:400W(10/1000μs)and2.5kW(8/20μs) •Flatandthinpackage:1mm •Stand-offvoltagerangefrom5Vto188V •Unidirectionaltype •Lowleakagecurrent:0.2μAat25°Cand1μAat85°C •OperatingTjmax:175°C •HighpowercapabilityatTjmax.:upto