丝印：4D；Package：X2-DFN1410-8；DUAL BIT DUAL POWER SUPPLY TRANSLATING TRANSCEIVER WITH 3 STATE OUTPUTS

Features  Wide Supply Voltage Range:  VCC(A): from 1.2V to 5.5V  VCC(B): from 1.2V to 5.5V  ± 24mA Output Drive at 3.3V  CMOS Low Power Consumption 16μA Maximum ICC  High Noise Immunity  IOFF Supports Partial-Power-Down Mode Operation  IOFF Controlled by Either VCC Being at 0V  I

文件：842.55 Kbytes 页数：16 Pages

DIODES

美台半导体

丝印：4D；Package：SOT323；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

文件：330.54 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4D；Package：DFN2020MD-6；40 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Extended temperature range Tj = 175 ℃ • Side wettable flanks for op

文件：280.98 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4D；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4D；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4D；Package：PG-TSDSON-8-44；OptiMOSTM 7 Power-Transistor

Features • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalan

文件：2.91795 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：4D；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：4D；Package：SOT-23；PNP Plastic-Encapsulate Transistors

FEATURES • Epoxy meets UL-94 V-0 flammability rating • Complementary to MMBTA44 • Power Dissipation of 350mW • High Stability and High Reliability

文件：1.35017 Mbytes 页数：5 Pages

JINGHENG

晶恒

丝印：4D；Package：SOT-23；Epitaxial Transistor

PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor FEATURES • High Voltage Transistor

文件：283.49 Kbytes 页数：2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

丝印：4D；Package：SOT-23；Surface mount High Voltage Transistors

Surface mount High Voltage Transistors • Power dissipation 200 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：105.44 Kbytes 页数：2 Pages

Diotec

德欧泰克