HIGH VOLTAGE TRANSISTOR

HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage: VCEO=-400V * Collector Dissipation: PC(MAX)=350mW * Low Collector-Emitter Saturation Voltage APPLICATIONS * Telephone Switching * High Voltage Switch

文件：48.51 Kbytes 页数：3 Pages

UTC

友顺

SOT-23-3L Plastic-Encapsulate Transistors

SOT-23-3L Plastic-Encapsulate Transistors(PNP) FEATURES Power dissipation PCM : 0.35 W （Tamb=25℃） Collector current ICM :-0.2 A Collector-base voltage V(BR)CBO: -400 V Operating and storage junction temperature range TJ，Tstg: -55℃to +150℃

文件：51.44 Kbytes 页数：1 Pages

AVICTEK

PNP High Voltage Transistor

■ FEATURES PNP High Voltage Transistor

文件：333.14 Kbytes 页数：2 Pages

GSME

桂微

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES  High Breakdown Voltage MARKING:4D

文件：303.6 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Breakdown Voltage

文件：933.81 Kbytes 页数：4 Pages

JIANGSU

长电科技

丝印：4D；Package：SOT-23；Surface mount High Voltage Transistors

Surface mount High Voltage Transistors • Power dissipation 200 mW • Plastic case SOT-23 • Weight approx. 0.01 g • Plastic material has UL classification 94V-0 • Standard packaging taped and reeled

文件：105.44 Kbytes 页数：2 Pages

DIOTEC

德欧泰克

PNP Silicon High Voltage Transistor

Features • Surface Mount SOT-23 Package • Capable of 350mWatts of Power Dissipation • Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Marking: 4D

文件：386.41 Kbytes 页数：3 Pages

MCC

丝印：4Z；Package：SOT-23；High-Voltage PNP Transistor Surface Mount

High-Voltage PNP Transistor Surface Mount P/b Lead(Pb)-Free

文件：206.28 Kbytes 页数：3 Pages

WEITRON

丝印：4D；Package：SOT-23；Epitaxial Transistor

PNP Silicon -400V, -0.1A, 350mW Epitaxial Transistor FEATURES • High Voltage Transistor

文件：283.49 Kbytes 页数：2 Pages

SECOS

喜可士

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. The transistor is subdivided into one group according to its DC current gain.

文件：130.33 Kbytes 页数：1 Pages

SEMTECH_ELEC

先之科半导体