SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Breakdown Voltage

文件：1.05342 Mbytes 页数：2 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.35 W (Tamb=25℃) Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO: -400 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：131.1 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features High voltage, low saturation voltage. Applications High voltage control circuit.

文件：983.01 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：4D；Package：SOT-23；Plastic -Encapsulate Transistors

FEATURES  High Breakdown Voltage

文件：1.97509 Mbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：4D；Package：SOT-23；PNP Plastic-Encapsulate Transistors

FEATURES • Epoxy meets UL-94 V-0 flammability rating • Complementary to MMBTA44 • Power Dissipation of 350mW • High Stability and High Reliability

文件：1.35017 Mbytes 页数：5 Pages

JINGHENG

晶恒

丝印：4D；Package：SOT-23；PNP Transistors

■ Features ● High Breakdown Voltage ● Complement to MMBTA44

文件：576.86 Kbytes 页数：3 Pages

YFWDIODE

佑风微

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( PNP ) Features ● High Breakdown Voltage

文件：2.39461 Mbytes 页数：4 Pages

HDSEMI

海德半导体

丝印：4Z；Package：SOT-23；PNP EPITAXIAL PLANAR TRANSISTOR

PNP EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. Description The MMBTA94 is designed for application that requires high voltage. Features • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA • Complementary to MMBTA44

文件：196.36 Kbytes 页数：3 Pages

FS

丝印：4D；Package：SOT-23；PNP Plastic-Encapsulate Transistors

FEATURES Epoxy meets UL-94 V-0 flammability rating Power Dissipation of 350mW High Stability and High Reliability Complementary to MMBTA44

文件：2.18818 Mbytes 页数：4 Pages

SAMYANG

三阳电子

丝印：4D；Package：SOT-23；PNP Transistor

文件：613.75 Kbytes 页数：3 Pages

PJSEMI

平晶半导体