丝印：4F；Package：TSSOP6；NPN general purpose double transistor

Features and benefits • Two transistors in one package • Reduces number of components and board space • No mutual interference between the transistors

文件：233.53 Kbytes 页数：9 Pages

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丝印：4F；Package：TSSOP6；NPN general purpose double transistor

Features and benefits • Two transistors in one package • Reduces number of components and board space • No mutual interference between the transistors • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：222.05 Kbytes 页数：11 Pages

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安世安世半导体(中国)有限公司

丝印：4F；Package：SOT23；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

文件：355.55 Kbytes 页数：9 Pages

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安世安世半导体(中国)有限公司

丝印：4F；Package：SOT323；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

文件：330.54 Kbytes 页数：8 Pages

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安世安世半导体(中国)有限公司

丝印：4F；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

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安世安世半导体(中国)有限公司

丝印：4F；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

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丝印：4F；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：4F；Package：SC-74；50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 1 kΩ, R2 = 10 kΩ

1. General description PNP/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN31 NPN/PNP complement: PIMC31 2. Features and benefits • 500 mA output current capability • Built-in bias resistors •

文件：268.82 Kbytes 页数：11 Pages

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安世安世半导体(中国)有限公司

丝印：4F；Package：SC-74；50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 1 kΩ, R2 = 10 kΩ

1. General description PNP/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN31 NPN/PNP complement: PIMC31 2. Features and benefits • 500 mA output current capability • Built-in bias resistors •

文件：270.35 Kbytes 页数：12 Pages

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安世安世半导体(中国)有限公司

丝印：4F；Package：SOT23；Schottky barrier double diode

FEATURES •Low forward voltage •Small SMD package •Low capacitance. APPLICATIONS •UHF mixer •Sampling circuits •Modulators •Phase detection. DESCRIPTION Planar Schottky barrier double diode in a SOT23 small plastic SMD package.

文件：256.56 Kbytes 页数：8 Pages

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