BC846S

Marking：4F；Package：TSSOP6；NPN general purpose double transistor

Featuresandbenefits •Twotransistorsinonepackage •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors

BC846S-Q

Marking：4F；Package：TSSOP6；NPN general purpose double transistor

Featuresandbenefits •Twotransistorsinonepackage •Reducesnumberofcomponentsandboardspace •Nomutualinterferencebetweenthetransistors •QualifiedaccordingtoAEC-Q101andrecommendedforuseinautomotiveapplications

BC860B

Marking：4F；Package：SOT23；PNP general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

BC860BW

Marking：4F；Package：SOT323；PNP general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

BZX884S-C20

Marking：4F；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-C20-Q

Marking：4F；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

MM1Z3V3

Marking：4F；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

PIMP31

Marking：4F；Package：SC-74；50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 1 kΩ, R2 = 10 kΩ

1.Generaldescription PNP/PNPResistor-EquippeddoubleTransistor(RET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PIMN31 NPN/PNPcomplement:PIMC31 2.Featuresandbenefits •500mAoutputcurrentcapability •Built-inbiasresistors •

PIMP31-Q

Marking：4F；Package：SC-74；50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 1 kΩ, R2 = 10 kΩ

1.Generaldescription PNP/PNPResistor-EquippeddoubleTransistor(RET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PIMN31 NPN/PNPcomplement:PIMC31 2.Featuresandbenefits •500mAoutputcurrentcapability •Built-inbiasresistors •

PMBD353

Marking：4F；Package：SOT23；Schottky barrier double diode

FEATURES •Lowforwardvoltage •SmallSMDpackage •Lowcapacitance. APPLICATIONS •UHFmixer •Samplingcircuits •Modulators •Phasedetection. DESCRIPTION PlanarSchottkybarrierdoublediodeinaSOT23smallplasticSMDpackage.