DMN24H11DSQ-13

Marking：4H1；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsof Automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: DC-DCConverters PowerManagementFunctions BatteryOperatedSystemsandSolid-StateRelays D

DMN24H11DSQ-7

Marking：4H1；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsof Automotiveapplications.ItisqualifiedtoAEC-Q101,supportedbya PPAPandisidealforusein: DC-DCConverters PowerManagementFunctions BatteryOperatedSystemsandSolid-StateRelays D

TMAG5124H1CQDBZR

Marking：4H1；Package：SOT-23；TMAG5124 2-Wire, High-Precision, Hall-Effect Switch Sensor

TMAG5124H1CQDBZT

Marking：4H1；Package：SOT-23；TMAG5124 2-Wire, High-Precision, Hall-Effect Switch Sensor

MJK44H11TWG

Marking：4H11G；Package：LFPAK4；Power Transistor 80 V, 8 A Dual General Purpose NPN

Designedforgeneralpurposepowerandswitchingapplications suchasregulators,convertersandpoweramplifiers.Housed inadvancedLFPAKpackage(5x6mm)withexcellentthermal conduction.Automotiveendapplicationsincludeairbagdeployment, powertraincontrolunits,andinstrumentcl

NJVMJK44H11TWG

Marking：4H11G；Package：LFPAK4；Power Transistor 80 V, 8 A Dual General Purpose NPN

Designedforgeneralpurposepowerandswitchingapplications suchasregulators,convertersandpoweramplifiers.Housed inadvancedLFPAKpackage(5x6mm)withexcellentthermal conduction.Automotiveendapplicationsincludeairbagdeployment, powertraincontrolunits,andinstrumentcl

OPA4H199MDYYTSEP

Marking：4H199SEP；Package：SOT-23-THIN；OPA4H199-SEP 40-V, Radiation Hardened, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp in Space Enhanced Plastic

1Features •Radiationhardened –SingleEventLatch-up(SEL)immuneto43 MeV-cm2/mgat125°C –ELDRSfreeto30krad(Si) –TotalIonizingDose(TID)RLATforeverywafer lotupto30krad(Si) •Supportsdefense,aerospace,andmedical applications –Singlecontrolledbaseline –Onefab

V62/21615-02XE

Marking：4H199SEP；Package：SOT-23-THIN；OPA4H199-SEP 40-V, Radiation Hardened, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp in Space Enhanced Plastic

1Features •Radiationhardened –SingleEventLatch-up(SEL)immuneto43 MeV-cm2/mgat125°C –ELDRSfreeto30krad(Si) –TotalIonizingDose(TID)RLATforeverywafer lotupto30krad(Si) •Supportsdefense,aerospace,andmedical applications –Singlecontrolledbaseline –Onefab

V62SLASH21615-02XE

Marking：4H199SEP；Package：SOT-23-THIN；OPA4H199-SEP 40-V, Radiation Hardened, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp in Space Enhanced Plastic

1Features •Radiationhardened –SingleEventLatch-up(SEL)immuneto43 MeV-cm2/mgat125°C –ELDRSfreeto30krad(Si) –TotalIonizingDose(TID)RLATforeverywafer lotupto30krad(Si) •Supportsdefense,aerospace,andmedical applications –Singlecontrolledbaseline –Onefab

TMAG5124H1CEDBZRQ1

Marking：4H1Z；Package：SOT-23；TMAG5124-Q1 Automotive 2-Wire, High-Precision, Hall-Effect Switch Sensor