丝印：4H1；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  DC-DC Converters  Power Management Functions  Battery Operated Systems and Solid-State Relays  D

文件：620.44 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：4H1；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  DC-DC Converters  Power Management Functions  Battery Operated Systems and Solid-State Relays  D

文件：620.44 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：4H1；Package：SOT-23；TMAG5124 2-Wire, High-Precision, Hall-Effect Switch Sensor

文件：1.82057 Mbytes 页数：31 Pages

TI

德州仪器

丝印：4H1；Package：SOT-23；TMAG5124 2-Wire, High-Precision, Hall-Effect Switch Sensor

文件：1.82057 Mbytes 页数：31 Pages

TI

德州仪器

丝印：4H11G；Package：LFPAK4；Power Transistor 80 V, 8 A Dual General Purpose NPN

Designed for general purpose power and switching applications such as regulators, converters and power amplifiers. Housed in advanced LFPAK package (5 x 6 mm) with excellent thermal conduction. Automotive end applications include air bag deployment, power train control units, and instrument cl

文件：1.66812 Mbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：4H11G；Package：LFPAK4；Power Transistor 80 V, 8 A Dual General Purpose NPN

Designed for general purpose power and switching applications such as regulators, converters and power amplifiers. Housed in advanced LFPAK package (5 x 6 mm) with excellent thermal conduction. Automotive end applications include air bag deployment, power train control units, and instrument cl

文件：1.66812 Mbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：4H199SEP；Package：SOT-23-THIN；OPA4H199-SEP 40-V, Radiation Hardened, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp in Space Enhanced Plastic

1 Features • Radiation hardened – Single Event Latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Supports defense, aerospace, and medical applications – Single controlled baseline – One fab

文件：2.46996 Mbytes 页数：38 Pages

TI

德州仪器

丝印：4H199SEP；Package：SOT-23-THIN；OPA4H199-SEP 40-V, Radiation Hardened, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp in Space Enhanced Plastic

1 Features • Radiation hardened – Single Event Latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Supports defense, aerospace, and medical applications – Single controlled baseline – One fab

文件：2.46996 Mbytes 页数：38 Pages

TI

德州仪器

丝印：4H199SEP；Package：SOT-23-THIN；OPA4H199-SEP 40-V, Radiation Hardened, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp in Space Enhanced Plastic

1 Features • Radiation hardened – Single Event Latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Supports defense, aerospace, and medical applications – Single controlled baseline – One fab

文件：2.46996 Mbytes 页数：38 Pages

TI

德州仪器

丝印：4H1Z；Package：SOT-23；TMAG5124-Q1 Automotive 2-Wire, High-Precision, Hall-Effect Switch Sensor

文件：1.86959 Mbytes 页数：31 Pages

TI

德州仪器