丝印：4H199SEP；Package：SOT-23-THIN；OPA4H199-SEP 40-V, Radiation Hardened, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp in Space Enhanced Plastic

1 Features • Radiation hardened – Single Event Latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Supports defense, aerospace, and medical applications – Single controlled baseline – One fab

文件：2.46996 Mbytes 页数：38 Pages

TI

德州仪器

丝印：4H199SEP；Package：SOT-23-THIN；OPA4H199-SEP 40-V, Radiation Hardened, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp in Space Enhanced Plastic

1 Features • Radiation hardened – Single Event Latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Supports defense, aerospace, and medical applications – Single controlled baseline – One fab

文件：2.46996 Mbytes 页数：38 Pages

TI

德州仪器

丝印：4H199SEP；Package：SOT-23-THIN；OPA4H199-SEP 40-V, Radiation Hardened, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp in Space Enhanced Plastic

1 Features • Radiation hardened – Single Event Latch-up (SEL) immune to 43 MeV-cm2/mg at 125°C – ELDRS free to 30 krad(Si) – Total Ionizing Dose (TID) RLAT for every wafer lot up to 30 krad(Si) • Supports defense, aerospace, and medical applications – Single controlled baseline – One fab

文件：2.46996 Mbytes 页数：38 Pages

TI

德州仪器