丝印：4J；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ► Nominal resistor tolerance error: ±8% maximum ► Wiper current: ±6 mA ► Rheostat mode temperature coefficient: 35 ppm/°C ► Low power consumption: 2.5 μA max @ 2.7 V and 125°C ► Wide bandwidth: 4 MHz (5 kΩ option) ► Power-on EEPROM refresh time

文件：2.28608 Mbytes 页数：28 Pages

AD

亚德诺

丝印：4J；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ► Nominal resistor tolerance error: ±8% maximum ► Wiper current: ±6 mA ► Rheostat mode temperature coefficient: 35 ppm/°C ► Low power consumption: 2.5 μA max @ 2.7 V and 125°C ► Wide bandwidth: 4 MHz (5 kΩ option) ► Power-on EEPROM refresh time

文件：2.28608 Mbytes 页数：28 Pages

AD

亚德诺

丝印：4J；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：4J；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：4J；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：4J；Package：SC-74；50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description PNP/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN32 NPN/PNP complement: PIMC32 2. Features and benefits • 500 mA output current capability • Built-in bias resistors •

文件：265.78 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：4J；Package：SC-74；50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description PNP/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN32-Q NPN/PNP complement: PIMC32-Q 2. Features and benefits • 500 mA output current capability • Built-in bias resistors

文件：267.35 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：4J；Package：SOT1220；12 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Trench MOSFET technology • Side we

文件：302.91 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：4J；Package：SOD-123；Zener Diodes

文件：1.04178 Mbytes 页数：4 Pages

YFWDIODE

佑风微

丝印：4J；Package：SOD-123；Silicon Planar Zener Diodes

文件：544.59 Kbytes 页数：4 Pages

BYTESONIC

松浩电子