AD5110BCPZ10-500R7

Marking：4J；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ►Nominalresistortoleranceerror:±8%maximum ►Wipercurrent:±6mA ►Rheostatmodetemperaturecoefficient:35ppm/°C ►Lowpowerconsumption:2.5μAmax@2.7Vand125°C ►Widebandwidth:4MHz(5kΩoption) ►Power-onEEPROMrefreshtime

AD5110BCPZ10-RL7

Marking：4J；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ►Nominalresistortoleranceerror:±8%maximum ►Wipercurrent:±6mA ►Rheostatmodetemperaturecoefficient:35ppm/°C ►Lowpowerconsumption:2.5μAmax@2.7Vand125°C ►Widebandwidth:4MHz(5kΩoption) ►Power-onEEPROMrefreshtime

BZX884S-C27

Marking：4J；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-C27-Q

Marking：4J；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

MM1Z3V9

Marking：4J；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

PIMP32

Marking：4J；Package：SC-74；50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription PNP/PNPResistor-EquippeddoubleTransistor(RET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PIMN32 NPN/PNPcomplement:PIMC32 2.Featuresandbenefits •500mAoutputcurrentcapability •Built-inbiasresistors •

PIMP32-Q

Marking：4J；Package：SC-74；50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription PNP/PNPResistor-EquippeddoubleTransistor(RET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PIMN32-Q NPN/PNPcomplement:PIMC32-Q 2.Featuresandbenefits •500mAoutputcurrentcapability •Built-inbiasresistors

PMPB15XPA

Marking：4J；Package：SOT1220；12 V, P-channel Trench MOSFET

1.Generaldescription P-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •TrenchMOSFETtechnology •Sidewe

MM1Z3V9

Marking：4J；Package：SOD-123；Silicon Planar Zener Diodes

MM1Z3V9

Marking：4J；Silicon planar zener diode in a small plastic