2SC6125

Marking：4L；Package：PW-Mini；Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

AD5110BCPZ80-500R7

Marking：4L；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ►Nominalresistortoleranceerror:±8%maximum ►Wipercurrent:±6mA ►Rheostatmodetemperaturecoefficient:35ppm/°C ►Lowpowerconsumption:2.5μAmax@2.7Vand125°C ►Widebandwidth:4MHz(5kΩoption) ►Power-onEEPROMrefreshtime

AD5110BCPZ80-RL7

Marking：4L；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ►Nominalresistortoleranceerror:±8%maximum ►Wipercurrent:±6mA ►Rheostatmodetemperaturecoefficient:35ppm/°C ►Lowpowerconsumption:2.5μAmax@2.7Vand125°C ►Widebandwidth:4MHz(5kΩoption) ►Power-onEEPROMrefreshtime

BC858CLT3G

Marking：4L；Package：SOT-23；General Purpose Transistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

BD5229NVX

Marking：4l；Package：SSON004R1010；Free Time Delay Setting CMOS Voltage Detector (Reset) IC

GeneralDescription ROHM'sFreeTimeDelaySettingCMOSVoltage DetectorICsarehighlyaccurate,withultra-lowcurrent consumptionfeaturethatusesCMOSprocess.Delay timesettingcanbecontrolbyanexternalcapacitor.The lineupincludesN-channelopendrainoutput(BD52xx NVX-2C)and

BZX884S-C2V7

Marking：4L；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-C2V7-Q

Marking：4L；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

ESD3.3V88D-LA

Marking：4L；Package：DFN1006；Transient Voltage Suppressors for ESD Protection

Features 99WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsOneUnidirectionalI/OLine Lowclampingvoltage LowCapacitance Workingvoltages:3.3V IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(LIGHTING)9A(8/20μs) IEC61000-4-2(ESD)±17kV(airdischarge) ±15kV(contactdischarge)

ESD3.3V88DS-LA

Marking：4L；Package：DFN1006；Transient Voltage Suppressors for ESD Protection

Features MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 100WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsOneUnidirectionalI/OLine Lowclampingvoltage Workingvoltage:3.3V Lowleakagecurrent IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-5(LIGHTING)9A(8/20μs) IEC6100

PMN37ENE

Marking：4L；Package：SOT457；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT457Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •ExtendedtemperaturerangeTj=175°C •TrenchMOSFETtechnology