丝印：4L；Package：PW-Mini；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

丝印：4L；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ► Nominal resistor tolerance error: ±8% maximum ► Wiper current: ±6 mA ► Rheostat mode temperature coefficient: 35 ppm/°C ► Low power consumption: 2.5 μA max @ 2.7 V and 125°C ► Wide bandwidth: 4 MHz (5 kΩ option) ► Power-on EEPROM refresh time

文件：2.28608 Mbytes 页数：28 Pages

AD

亚德诺

丝印：4L；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ► Nominal resistor tolerance error: ±8% maximum ► Wiper current: ±6 mA ► Rheostat mode temperature coefficient: 35 ppm/°C ► Low power consumption: 2.5 μA max @ 2.7 V and 125°C ► Wide bandwidth: 4 MHz (5 kΩ option) ► Power-on EEPROM refresh time

文件：2.28608 Mbytes 页数：28 Pages

AD

亚德诺

丝印：4L；Package：SOT-23；General Purpose Transistors

General Purpose Transistors PNP Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V • We declare that the material of product compliance with RoHS requirements.

文件：179.58 Kbytes 页数：8 Pages

FS

丝印：4l；Package：SSON004R1010；Free Time Delay Setting CMOS Voltage Detector (Reset) IC

General Description ROHM's Free Time Delay Setting CMOS Voltage Detector ICs are highly accurate, with ultra-low current consumption feature that uses CMOS process. Delay time setting can be control by an external capacitor. The lineup includes N-channel open drain output (BD52xx NVX-2C) and

文件：1.40163 Mbytes 页数：21 Pages

ROHM

罗姆

丝印：4L；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：4L；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：4L；Package：DFN1006；Transient Voltage Suppressors for ESD Protection

Features 99 Watts Peak Pulse Power per Line (tp=8/20μs) Protects One Unidirectional I/O Line Low clamping voltage Low Capacitance Working voltages : 3.3V IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (LIGHTING) 9A (8/20μs) IEC61000-4-2(ESD) ±17kV (air discharge) ±15kV (contact discharge)

文件：2.72618 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：4L；Package：DFN1006；Transient Voltage Suppressors for ESD Protection

Features Moisture Sensitivity Level (MSL -1) AEC-Q101 qualified 100 Watts Peak Pulse Power per Line (tp=8/20μs) Protects One Unidirectional I/O Line Low clamping voltage Working voltage : 3.3V Low leakage current IEC61000-4-4 (EFT) 40A (5/50ηs) IEC61000-4-5 (LIGHTING) 9A (8/20μs) IEC6100

文件：2.66679 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：4L；Package：SOT457；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology

文件：279.1 Kbytes 页数：15 Pages

NEXPERIA

安世