丝印：4L；Package：SOT457；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Extended temperature range Tj = 175 °C\n• Trench MOSFET technology\n• ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2);

Nexperia

安世

NEXPERIA/安世
SOT-457

NEXPERIA/安世

上传：深圳市明嘉莱科技有限公司

NXP/恩智浦
DFN

恩XP

上传：深圳市中远芯科技有限公司

ROHM/罗姆
2512

ROHM/罗姆

上传：佛山市芯光达科技有限公司