AD5110BCPZ10-1-RL7

Marking：4H；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ►Nominalresistortoleranceerror:±8%maximum ►Wipercurrent:±6mA ►Rheostatmodetemperaturecoefficient:35ppm/°C ►Lowpowerconsumption:2.5μAmax@2.7Vand125°C ►Widebandwidth:4MHz(5kΩoption) ►Power-onEEPROMrefreshtime

BC860W

Marking：4H；Package：SOT323；PNP general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

BZX884S-C24

Marking：4H；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-C24-Q

Marking：4H；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

MM1Z3V6

Marking：4H；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

PESDLC5V0J4AT8

Marking：4H；Package：SOT-353；Plastic-Encapsulate Diodes

DESCRIPTION DesignedtoprotectvoltagesensitiveelectroniccomponentsfromESDandothertransients. Excellentclampingcapability,lowleakage,lowcapacitance, andfastresponsetimeprovidebestinclassprotectionondesignsthatareexposedtoESD. Thecombinationofsmallsize,lowcap

PIMC32

Marking：4H；Package：SC-74；50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription NPN/PNPResistor-EquippeddoubleTransistor(RET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PIMN32 PNP/PNPcomplement:PIMP32 2.Featuresandbenefits •500mAoutputcurrentcapability •Built-inbiasresistors •

PIMC32-Q

Marking：4H；Package：SC-74；50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription NPN/PNPResistor-EquippeddoubleTransistor(RET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackage. NPN/NPNcomplement:PIMN32-Q PNP/PNPcomplement:PIMP32-Q 2.Featuresandbenefits •500mAoutputcurrentcapability •Built-inbiasresistors

PMPB29XNEA

Marking：4H；Package：SOT1220；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •TrenchMOSFETtechnology •Sidewe

RT8096AHGB

Marking：4H；Package：SOT-23-5；1A, 1.5MHz, 6V CMCOT Synchronous Step-Down Converter

GeneralDescription TheRT8096Aisahighefficiencysynchronous step-downDC-DCconverter.Itsinputvoltagerangeis from2.5Vto6Vandprovidesanadjustableregulated outputvoltagefrom0.6Vto3.4Vwhiledeliveringupto 1Aofoutputcurrent. Theinternalsynchronouslowon-resistance