丝印：4H；Package：LFCSP；Single-Channel, 128-/64-/32-Position, I2C, 8% Resistor Tolerance, Nonvolatile Digital Potentiometer

FEATURES ► Nominal resistor tolerance error: ±8% maximum ► Wiper current: ±6 mA ► Rheostat mode temperature coefficient: 35 ppm/°C ► Low power consumption: 2.5 μA max @ 2.7 V and 125°C ► Wide bandwidth: 4 MHz (5 kΩ option) ► Power-on EEPROM refresh time

文件：2.28608 Mbytes 页数：28 Pages

AD

亚德诺

丝印：4H；Package：SOT323；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

文件：330.54 Kbytes 页数：8 Pages

NEXPERIA

安世

丝印：4H；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：4H；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：4H；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：4H；Package：SOT-353；Plastic-Encapsulate Diodes

DESCRIPTION Designed to protect voltage sensitive electronic components from ESD and other transients. Excellent clamping capability, low leakage, low capacitance, and fast response time provide best in class protection on designs that are exposed to ESD. The combination of small size, low cap

文件：257.89 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

丝印：4H；Package：SC-74；50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description NPN/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN32 PNP/PNP complement: PIMP32 2. Features and benefits • 500 mA output current capability • Built-in bias resistors •

文件：298.84 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：4H；Package：SC-74；50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description NPN/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN32-Q PNP/PNP complement: PIMP32-Q 2. Features and benefits • 500 mA output current capability • Built-in bias resistors

文件：298.9 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：4H；Package：SOT1220；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Trench MOSFET technology • Side we

文件：293.33 Kbytes 页数：14 Pages

NEXPERIA

安世

丝印：4H；Package：SOT-23-5；1A, 1.5MHz, 6V CMCOT Synchronous Step-Down Converter

General Description The RT8096A is a high efficiency synchronous step-down DC-DC converter. Its input voltage range is from 2.5V to 6V and provides an adjustable regulated output voltage from 0.6V to 3.4V while delivering up to 1A of output current. The internal synchronous low on-resistance

文件：1.02801 Mbytes 页数：19 Pages

RICHTEK

立锜科技