丝印：4FS；Package：SOT-23；PNP Silicon AF Transistors

PNP Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846, BC847, BC848, BC849, BC850 (NPN)

文件：218.06 Kbytes 页数：8 Pages

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丝印：4FS；Package：SOT-23；PNP Silicon AF Transistor

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847...-BC850... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

文件：866.73 Kbytes 页数：11 Pages

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丝印：4FS；Package：SOT-323；PNP Silicon AF Transistor

PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC847...-BC850... (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q1011)

文件：866.73 Kbytes 页数：11 Pages

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丝印：4FS；Package：SOT-323；PNP Silicon AF Transistors

• For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC846W, BC847W, BC848W, BC849W, BC850W (NPN)

文件：229.98 Kbytes 页数：8 Pages

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丝印：4FS；Package：DO221-AC；400 W TVS in SMA Flat

Features • Peak pulse power: 400 W (10/1000 μs) and 2.5 kW (8/20 μs) • Flat and thin package: 1 mm • Stand-off voltage range from 5 V to 188 V • Unidirectional type • Low leakage current: 0.2 μA at 25 °C and 1 μA at 85 °C • Operating Tj max: 175 °C • High power capability at Tj max.: up to

文件：655.85 Kbytes 页数：14 Pages

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丝印：4FS；Package：SOT-23；PNP Silicon AF Transistor

文件：887.44 Kbytes 页数：14 Pages

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丝印：4FS；Package：SOT-323；PNP Silicon AF Transistor

文件：887.44 Kbytes 页数：14 Pages

Infineon

英飞凌