丝印：4G；Package：SOT23；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

文件：355.55 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4G；Package：SOT323；PNP general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

文件：330.54 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4G；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4G；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4G；Package：SOT-23；SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR

SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR FEATURES * 60 Volt VCEO PARTMARKING DETAIL - 4G

文件：31.61 Kbytes 页数：1 Pages

Zetex

丝印：4G；Package：SC-62；150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

Features and benefits * High voltage * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC

文件：277.04 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4G；Package：SC-74；50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description NPN/NPN Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package. PNP/PNP complement: PIMP32 NPN/PNP complement: PIMC32 2. Features and benefits • 500 mA output current capability • Built-in bias resistors •

文件：259.12 Kbytes 页数：11 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4G；Package：SC-74；50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description NPN/NPN Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package. PNP/PNP complement: PIMP32-Q NPN/PNP complement: PIMC32-Q 2. Features and benefits • 500 mA output current capability • Built-in bias resistors

文件：260.69 Kbytes 页数：12 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4G；Package：SOT1220；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Trench MOSFET technology • Side we

文件：299.72 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：4G；Package：SOT-23；PNP Transistors

文件：540.59 Kbytes 页数：4 Pages

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