4G

型号：BC860C；Package：SOT23；PNP general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

4G

型号：BC860CW；Package：SOT323；PNP general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

4G

型号：BZX884S-C22；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

4G

型号：BZX884S-C22-Q；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

4G

型号：FMMT2484；Package：SOT-23；SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR

SOT23NPNSILICONPLANARSMALLSIGNALTRANSISTOR FEATURES *60VoltVCEO PARTMARKINGDETAIL-4G

4G

型号：PBHV9115X；Package：SC-62；150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

Featuresandbenefits *Highvoltage *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC

4G

型号：PIMN32；Package：SC-74；50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription NPN/NPNResistor-EquippeddoubleTransistor(RET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackage. PNP/PNPcomplement:PIMP32 NPN/PNPcomplement:PIMC32 2.Featuresandbenefits •500mAoutputcurrentcapability •Built-inbiasresistors •

4G

型号：PIMN32-Q；Package：SC-74；50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1.Generaldescription NPN/NPNResistor-EquippeddoubleTransistor(RET)inasmallSOT457(SC-74)Surface- MountedDevice(SMD)plasticpackage. PNP/PNPcomplement:PIMP32-Q NPN/PNPcomplement:PIMC32-Q 2.Featuresandbenefits •500mAoutputcurrentcapability •Built-inbiasresistors

4G

型号：PMPB13XNEA；Package：SOT1220；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •TrenchMOSFETtechnology •Sidewe

4G

型号：BC860C；Package：SOT-23；PNP Transistors