丝印：4G；Package：SC-62；150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

Features and benefits * High voltage * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC

文件：277.04 Kbytes 页数：14 Pages

NEXPERIA

安世

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

文件：163.33 Kbytes 页数：13 Pages

PHI

飞利浦

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

文件：163.33 Kbytes 页数：13 Pages

PHI

飞利浦

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

PNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified;

Nexperia

安世

150 V, 1 A PNP high-voltage low VCEsat transistor

PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) small and flat Surface-Mounted Device (SMD) plastic package. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Package：TO-243AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 150V 1A SOT89

Nexperia USA Inc.