PBHV9115X

丝印：4G；Package：SC-62；150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

Featuresandbenefits *Highvoltage *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC

PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor; • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified\n;

PNP high-voltage low VCEsat Breakthrough Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.\n

PBHV9115X

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

PBHV9115X-Q

150 V, 1 A PNP high-voltage low VCEsat transistor; • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• Qualified according to AEC-Q101 and recommended for use in automotive applications\n;

PNP high-voltage low VCEsat transistor in a SOT89 (SC-62) small and flat Surface-Mounted Device (SMD) plastic package.\n

PBHV9115X115

150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor

PBHV9115X,115

Package：TO-243AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 150V 1A SOT89

Nexperia USA Inc.